FML10 transistors 1/4 general purpose transistor (isolated transistor and diode) FML10 2sd2652 and a rb461f are housed independently in a umt package. z z z z applications dc / dc converter motor driver z z z z features 1) tr : low v ce (sat) di : low v f 2) small package z z z z structure silicon epitaxial planar transistor schottky barrier diode z z z z equivalent circuit tr1 di2 (5) (4) (3) (2) (1) z z z z packaging specifications type FML10 smt5 l10 tr 3000 package marking code basic ordering unit(pieces) z z z z external dimensions (units : mm) FML10 rohm : smt5 eiaj : sc-74a 0~0.1 1.1 0.8 0.3min. 0.15 1.6 2.8 2.9 0.95 1.9 ( 4 ) ( 5 ) ( 1 ) 0.3 ( 3 ) 0.95 ( 2 ) each lead has same dimensions abbreviated symbol : l10
FML10 transistors 2/4 z z z z absolute maximum ratings (ta=25 c) tr1 parameter symbol unit ? v cbo v collector-base voltage v ceo v collector-emitter voltage v ebo v emitter-base voltage i c a i cp a collector current p c mw power dissipation tj c junction temperature tstg limits 15 12 6 1.5 3 200 150 ? 55~ + 150 c range of storage temperature ? single pulse, p w = 1ms di2 parameter symbol i f i fsm v r tj tstg limits 700 3 20 125 ? 40~ + 125 unit ma a v c c average rectified forward current f orward current surge peak (60h z , 1 ) reverse voltage (dc) junction temperature range of storage temperature z z z z electrical characteristics (ta=25 c) tr1 parameter symbol min. typ. max. unit conditions 15 ?? v i c = 10 a collector-base breakdown voltage bv cbo 12 ?? v i c = 1ma collector-emitter breakdown voltage bv ceo 6 ?? v i e = 10 a emitter-base breakdown voltage bv ebo ?? 100 na v cb = 15v collector cutoff current i cbo emitter cutoff current ?? 100 na v eb = 6v i ebo ? 80 200 mv i c /i b = 500ma/25ma collector-emitter saturation voltage v ce(sat) 270 ? 680 ? v ce /i c = 2v/200ma dc current gain h fe ? 400 ? mhz v ce = 2v, i e =? 200ma, f = 100mhz transition frequency f t ? 12 ? pf v cb = 10v, i e = 0a, f = 1mhz collector output capacitance cob ? ? ? pulsed di2 parameter min. typ. max. unit conditions ? 490 ? mv i f =700ma v r =20v symbol v f i r ? ? 200 a forward voltage reverse current
FML10 transistors 3/4 z z z z electrical characteristic curves tr1 0.001 0.01 0.1 1 10 collector current : i c (a) fig.1 dc current gain vs. collector current 10 dc current gain : h fe 100 1000 ta = 25 c ta =? 40 c ta = 100 c v ce = 2v pulsed 0.001 0.01 0.1 1 10 collector current : i c (a) fig.2 collector-emitter saturation voltage base-emitter saturation voltage vs. collector current 0.001 base saturation voltage : v be (sat) (v) collector saturation voltage : v ce (sat) (v) 0.1 0.01 10 1 ta = 25 c ta = 25 c ta =? 40 c ta =? 40 c ta = 100 c ta = 100 c v be(sat) v ce(sat) i c /i b = 20 pulsed i c /i b = 20/1 pulsed 0.001 0.01 0.1 1 10 collector current : i c (a) fig.3 collector-emitter saturation voltage vs. collector current 0.001 collector saturation voltage : v ce(sat) (v) 0.01 0.1 1 ta = 25 c v ce = 2v i c /i b = 50/1 i c /i b = 20/1 i c /i b = 10/1 0 0.001 0.01 0.1 1 10 base to emitter voltage : v be (v) fig.4 grounded emitter propagation characteristics collector current : i c (a) 1.5 1.0 0.5 v ce = 2v pulsed ta = 25 c ta =? 40 c ta = 100 c ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 emitter current : i e (a) fig.5 gain bandwidth product vs. emitter current 10 transition frequency : f t (mhz) 100 1000 v ce = 2v ta = 25 c pulsed 0.01 0.1 1 10 collector current : i c (a) fig.6 switching time 1 switching time : (ns) 10 100 1000 ta = 25 c v ce = 2v f = 100mhz tstg tdon tr tf 0.1 1 10 100 emitter to base voltage : v eb (v) collector to base voltage : v cb (v) fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 1 emitter input capacitance : cib (pf) collector output capacitance : cob (pf) 10 100 cib cob i e = 0a f = 1mhz ta = 25 c
FML10 transistors 4/4 di2 0.1m 1m 10m 100m 1 10 forward current : i f (a) forward voltage : v f (v) 0 0.1 0.2 0.3 0.4 0.5 0.6 fig.9 forward characteristics ta = 125 c ta =? 25 c ta = 25 c 0.1 1 10 100 1m 10m 100m 1000m reverse current : i r (a) reverse voltage : v r (v) 010 20 30 40 50 60 70 fig.10 reverse characteristics ta = 25 c ta =? 25 c ta = 125 c
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